Specifications Interface PCIe® Gen 4.0 x4 / 5.0 x2 NVMe™ 2.01 Form Factor M.2 (2280) Storage Memory Samsung V-NAND 3-bit TLC Controller Samsung In-house Controller Capacity 1 TB 2 TB 4 TB Sequential Read/Write Speed 1TB: Up to 7,150 MB/s, 6,300 MB/s 2TB: Up to 7,250 MB/s, 6,300 MB/s 4TB: Up to 7,250 MB/s, 6,300 MB/s Random Read/Write Speed (QD32): 1TB Up to 850K IOPS, 1,350K IOPS 2TB Up to 1,000K IOPS, 1,350K IOPS 4TB Up to 1,050K IOPS, 1,400K IOPS Management Software Samsung Magician Software Data Encryption AES 256-bit Full Disk Encryption, TCG/Opal V2.0, Encrypted Drive (IEEE1667) Total Bytes Written: 1TB/600 TB 2TB/1200 TB 4TB/2400 TB.